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Same model may have multiple batches, images only for reference.
IRF3808LPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF3808LPBF

Part No IRF3808LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 106A TO-262 / Trans MOSFET N-CH Si 75V 106A 3-Pin(3+Tab) TO-262
Datasheet
IRF3808LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 75V
Current - Continuous Drain (Id) @ 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5310pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 200W (Tc)
Rds On (Maximum) @ Id, Vgs 7 mOhm @ 82A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 777014-IRF3808LPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRF3808
Introduction Date July 02, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3808LPBF CAD Model

Description

The Infineon Technologies MOSFET, IRF3808LPBF, is a through-hole mounting style electronic component that operates in the -55°C to 175°C temperature range.

  • Current Continuous Drain: 106A (Tc) @ 25°C
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Technology: HEXFET
  • Voltage Gate-Source Threshold: 4V @ 250µA
  • Gate Charge: 220nC @ 10V
  • Drain-Source Voltage: 75V
  • Power Dissipation: 200W (Tc)
  • Input Capacitance: 5310pF @ 25V
  • Rds On: 7 mOhm @ 82A, 10V

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