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Same model may have multiple batches, images only for reference.
SI3438DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3438DV-T1-GE3

Part No SI3438DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 5.5A 6-Pin TSOP T/R / MOSFET N-CH 40V 7.4A 6-TSOP
Datasheet
SI3438DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 640pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Maximum Rds On at Id,Vgs 35.5 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028421-SI3438DV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si3438DV
Introduction Date July 29, 2008
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI3438DV-T1-GE3 CAD Model

Description

The Vishay SI3438DV-T1-GE3 MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 40V and continuous drain current of 7.4A at 25°C.

  • Maximum Rds On: 35.5 mOhm @ Id,Vgs of 5A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Input Capacitance: 640pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Package: 6-TSOP
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4680 $51.4800
265+ $0.3840 $101.7600
405+ $0.3720 $150.6600
560+ $0.3600 $201.6000
720+ $0.3480 $250.5600
965+ $0.3120 $301.0800
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Availability: 66,000 pieces
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