The Infineon Technologies IRF540N is a commonly used MOSFET that is ideal for use in discrete semiconductor products. It has a packaging of Tube/Rail and is mounted using Through Hole technology. This product has a polarity of N-Channel and a power dissipation (Max) of 130W (Tc). The gate-source threshold voltage is 4V @ 250μA, and the maximum gate charge is 71nC @ 10V. The maximum input capacitance is 1960pF @ 25V, and the maximum Rds On at Id,Vgs is 44 mOhm @ 16A, 10V. This product has a drain-source breakdown voltage of 100V and a continuous drain current of 33A (Tc) at 25°C. It is packaged in a TO-220AB case / package with a dimension of TO-220-3. in the open market. The supply and demand status of this product is limited.