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Same model may have multiple batches, images only for reference.
IRF540N Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF540N

Part No IRF540N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 33A TO-220AB
Datasheet
IRF540N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 037044-IRF540N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF540N CAD Model

Description

The Infineon Technologies IRF540N is a commonly used MOSFET that is ideal for use in discrete semiconductor products.

  • Packaging: Tube/Rail
  • Mounting Type: Through Hole
  • Polarity: N-Channel
  • Power Dissipation (Max): 130W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 71nC @ 10V
  • Maximum Input Capacitance: 1960pF @ 25V
  • Maximum Rds On @ Id,Vgs: 44 mOhm @ 16A, 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Case / Package: TO-220AB
  • Dimension: TO-220-3
  • Supply and Demand Status: Limited

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430+ $0.2337 $100.4910
665+ $0.2258 $150.1570
955+ $0.2100 $200.5500
1,240+ $0.2022 $250.7280
1,545+ $0.1943 $300.1935
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