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Same model may have multiple batches, images only for reference.
IRF540NLPBF
Same model may have multiple batches, images only for reference.

IRF540NLPBF

Part No IRF540NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 33A TO-262
Datasheet
IRF540NLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040683-IRF540NLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF540NLPBF CAD Model

Description

The Infineon Technologies IRF540NLPBF is a high-performance N-Channel MOSFET that is designed for use in a variety of applications.

  • Polarity: N-Channel
  • Power Dissipation: 130W (max)
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 71nC @ 10V
  • Package: TO-262
  • Maximum Rds On: 44 mOhm @ 16A and 10V
  • Applications: Power supplies, motor control circuits, and other high-power applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2514 $50.0560
100+ $1.0268 $102.6800
155+ $0.9948 $154.1940
210+ $0.9627 $202.1670
270+ $0.9306 $251.2620
360+ $0.8343 $300.3480
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Availability: 1,150 pieces
MOQ: 40 pcs
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