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Same model may have multiple batches, images only for reference.
IRF5805 Real Image
Same model may have multiple batches, images only for reference.

IRF5805

Part No IRF5805
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-30V) | MOSFET P-CH 30V 3.8A 6-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 3.8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 98mOhm at 3.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 511pF at 25V
Power Dissipation (Maximum) 2W
Mounting Style SMD
Supplier Device Package Micro6(TSOP-6)
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1187067-IRF5805
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5805 CAD Model

Description

The Infineon Technologies IRF5805 is a P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Drive Voltage: 4.5V
  • Minimum Rds On: 10V
  • Packaging: Micro6(TSOP-6)
  • Mounting Style: SMD
  • Maximum Power Dissipation: 2W
  • Gate Source Voltage: ±20V
  • Input Capacitance: 511pF @ 25V
  • Product Status: Obsolete
  • Pack Size: 100
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1952 $58.5600
720+ $0.1605 $115.5600
1,115+ $0.1559 $173.8285
1,540+ $0.1502 $231.3080
1,985+ $0.1455 $288.8175
2,655+ $0.1305 $346.4775
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