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IRF5806

Part No IRF5806
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-20V) | MOSFET P-CH 20V 4A 6-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 4A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs 86mOhm at 4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11.4nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 594pF at 15V
Power Dissipation (Maximum) 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package Micro6(TSOP-6)
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1187068-IRF5806
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5806 CAD Model

Description

The IRF5806 is a P-channel MOSFET designed by Infineon Technologies.

  • Popularity: Medium
  • Supply: Limited
  • Win Source Part Number: 1187068-IRF5806
  • Status: Obsolete
  • Manufacturer Homepage: www.irf.com
  • Power Dissipation: 2W
  • Vds - Drain-Source Breakdown Voltage: 20V
  • Package: Micro6(TSOP-6)
  • Maximum Input Capacitance: 594pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9196 $59.7740
155+ $0.7546 $116.9630
240+ $0.7310 $175.4400
330+ $0.7075 $233.4750
425+ $0.6839 $290.6575
570+ $0.6131 $349.4670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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