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Same model may have multiple batches, images only for reference.
IRF5M5210
Same model may have multiple batches, images only for reference.

IRF5M5210

Part No IRF5M5210
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Contact Plating Lead, Tin
Continuous Drain Current (ID) -21 A
Current Rating -34 A
Drain to Source Breakdown Voltage -100 V
Drain to Source Resistance 70 mΩ
Drain to Source Voltage (Vdss) 100 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Win Source Part Number 1199099-IRF5M5210
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5M5210 CAD Model

Description

Infineon Technologies presents the IRF5M5210 transistor, a medium popularity product with a supply and demand status of limited.

  • Transistor Type: N-Channel MOSFET
  • Drain to Source Voltage: 100V
  • Continuous Drain Current: -21A
  • Drain to Source Breakdown Voltage: -100V
  • Drain to Source Resistance: 70mΩ
  • Power Dissipation: 125W
  • Maximum Operating Temperature: 150 °C
  • Category: Transistors - FETs, MOSFETs - RF
  • Mounting: Through Hole
  • Pins: 3
  • Lead-Containing: Yes
  • RoHS Compliant: Yes

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Quantity Unit Price Ext. Price
1+ $257.7778 $257.7778
2+ $231.1112 $462.2224
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