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Same model may have multiple batches, images only for reference.
IRF5N3415SCV
Same model may have multiple batches, images only for reference.

IRF5N3415SCV

Part No IRF5N3415SCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 22 A
Drain to Source Breakdown Voltage 150 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Bulk
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1032279-IRF5N3415SCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5N3415SCV CAD Model

Description

The IRF5N3415SCV is an N-channel RF MOSFET transistor designed for use in a variety of applications, including RF amplifiers and mixers by Infineon Technologies.

  • Maximum Power Dissipation: 125W
  • Drain to Source Breakdown Voltage: 150V
  • Continuous Drain Current: 22A
  • Gate to Source Voltage: 20V
  • Package: Available in a surface mount package
  • Temperature Range: -55°C to 150°C
  • Supply Status: In short supply
  • Risk: High risk of counterfeit products in the market.
  • Recommendation: Purchase from authorized distributors to ensure product authenticity.

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