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Same model may have multiple batches, images only for reference.
IRF5N5210SCS
Same model may have multiple batches, images only for reference.

IRF5N5210SCS

Part No IRF5N5210SCS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -31 A
Drain to Source Breakdown Voltage -100 V
Drain to Source Resistance 60 mΩ
Drain to Source Voltage (Vdss) -100 V
Gate to Source Voltage (Vgs) 20 V
Height 3.58 mm
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Number of Channels 1
On-State Resistance 100 mΩ
Power Dissipation 125 W
RoHS Non-Compliant
Turn-Off Delay Time 103 ns
Turn-On Delay Time 28 ns
Win Source Part Number 1229233-IRF5N5210SCS
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5N5210SCS CAD Model

Description

The Infineon Technologies IRF5N5210SCS is an N-channel power MOSFET transistor designed for use in high power applications.

  • Maximum Drain-Source Voltage: -100V
  • Continuous Drain Current: -31A
  • Package: TO-263
  • Operating Temperature Range: -55°C to 150°C
  • Popularity: Popular

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