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IRF6609

Name: IRF6609
Brand: Infineon Technologies
SKU: 604447
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRF6609
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Power MOSFET \| MOSFET N-CH 20V 31A DIRECTFET
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	20V
Id - Continuous Drain Current	31A, 150A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	2mOhm at 31A, 10V
Gate Source Voltage(th) (Maximum) at Id	2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	69nC at 4.5V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	6290pF at 10V
Power Dissipation (Maximum)	1.8W, 89W
Temperature Range - Operating	-40°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	DIRECTFET MT
Manufacturer Package	DirectFET Isometric MT
Manufacturer Pack Quantity	1
MSL Level	3 (168 Hours)
Win Source Part Number	1187135-IRF6609
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF6609 CAD Model

Alternative Products

Description

The Infineon Technologies IRF6609 is an N-Channel MOSFET with a drain-source breakdown voltage of 20V and continuous drain current of 31A.

Product Status: obsolete
Supply and Demand Status: limited
Package: DirectFET Isometric MT
Maximum Power Dissipation: 1.8W and 89W
Input Capacitance: 6290pF @ 10V
Gate Charge: 69nC @ 4.5V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
20+	$3.0119	$60.2380
47+	$2.4714	$116.1558
73+	$2.3941	$174.7693
100+	$2.3169	$231.6900
129+	$2.2397	$288.9213
173+	$2.0080	$347.3840

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 35,050 pieces

MOQ: 18 pcs

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