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IRF6629TR1PBF

Name: IRF6629TR1PBF
Brand: Infineon Technologies
SKU: 813483
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRF6629TR1PBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CH 25V 29A DIRECTFET
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Manufacturer	Infineon Technologies
Packaging	Reel
Part Status	Obsolete (End Of Life)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) at 25°C	29A , 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	2.1mOhm at 29A, 10V
Vgs(th) (Maximum) at Id	2.35V at 100μA
Gate Charge (Qg) (Maximum) at Vgs	51nC at 4.5V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	4260pF at 13V
Power Dissipation (Maximum)	2.8W , 100W (Tc)
Temperature Range - Operating	-40°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	DIRECTFET MX
Manufacturer Package	DirectFET Isometric MX
Manufacturer Pack Quantity	1,000
MSL Level	1 (Unlimited)
Popularity	Low
Supply and Demand Status	Limited
Win Source Part Number	813486-IRF6629TR1PBF
Ultra Librarian 3D Model	Ultra Librarian IRF6629TR1PBF CAD Model

Alternative Products

Description

The IRF6629TR1PBF is an obsolete MOSFET from Infineon Technologies.

FET Type: N-channel
Supplier Device Package: directFET MX
Maximum Power Dissipation: 2.8W
Current-Continuous Drain: 29A

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.3776	$61.9920
105+	$1.1304	$118.6920
160+	$1.0951	$175.2160
220+	$1.0598	$233.1560
285+	$1.0244	$291.9540
380+	$0.9185	$349.0300

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 4,000 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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