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Same model may have multiple batches, images only for reference.
IRF6795MTRPBF
Same model may have multiple batches, images only for reference.

IRF6795MTRPBF

Part No IRF6795MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 32A DIRECTFET-MX
Datasheet
IRF6795MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 53nC @ 4.5V
Max Input Capacitance 4280pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 32A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 017481-IRF6795MTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF6795MTRPBF CAD Model

Description

The IRF6795MTRPBF is a N-Channel MOSFET from Infineon Technologies that can be used in industrial and power management applications.

  • Maximum Power Dissipation: 2.8W (Ta) and 75W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 32A (Ta) and 160A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 53nC @ 4.5V
  • Maximum Input Capacitance: 4280pF @ 13V
  • Maximum Rds On at Id, Vgs: 1.8 mOhm @ 32A, 10V
  • Package: DirectFET MX
  • Operating Temperature Range: -40°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
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125+ $0.9275 $115.9375
195+ $0.8986 $175.2270
270+ $0.8697 $234.8190
345+ $0.8408 $290.0760
465+ $0.7531 $350.1915
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