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Same model may have multiple batches, images only for reference.
IRF7102
Same model may have multiple batches, images only for reference.

IRF7102

Part No IRF7102
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 2A 8-SOIC
Datasheet
IRF7102 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 300 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.6nC @ 10V
Max Input Capacitance 120pF @ 25V
Maximum Power Dissipation 2W
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 205307-IRF7102
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7102 CAD Model

Description

The IRF7102 is a 2 N-Channel (Dual) MOSFET Transistor from Infineon Technologies with a drain-source voltage of 50V and a continuous drain current of 2A @ 25°C.

  • Maximum Power Dissipation: 2W
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On at Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Packaging: tube/rail
  • Mounting: SMD (SMT)
  • Commonly used in: Discrete Semiconductor Products
  • Market Popularity: medium
  • Supply and Demand Status: balance

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Quantity Unit Price Ext. Price
30+ $2.0692 $62.0760
70+ $1.6979 $118.8530
110+ $1.6449 $180.9390
150+ $1.5917 $238.7550
190+ $1.5387 $292.3530
255+ $1.3795 $351.7725
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Availability: 1,800 pieces
MOQ: 30 pcs
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