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IRF7103PBF

Part No IRF7103PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 130 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 290pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046576-IRF7103PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7103PBF CAD Model

Description

The Infineon Technologies IRF7103PBF is a 2 N-Channel (Dual) FET with standard features, designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT)
  • Package: 8-SO
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current (@ 25°C): 3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge (@ 10V): 30nC
  • Max Input Capacitance (@ 25V): 290pF
  • Maximum Rds On (@ Id,Vgs): 130 mOhm @ 3A, 10V
  • Design Status: Not for New Designs
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2830 $50.9400
380+ $0.2651 $100.7380
590+ $0.2562 $151.1580
840+ $0.2383 $200.1720
1,095+ $0.2293 $251.0835
1,365+ $0.2203 $300.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,820 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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