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IRF7306TR

Part No IRF7306TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.6A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.6A
Maximum Rds On at Id,Vgs 100 mOhm @ 1.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 440pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046590-IRF7306TR
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7306TR CAD Model

Description

The Infineon Technologies IRF7306TR is a dual P-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 3.6A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.6A
  • Maximum Power Dissipation: 2W
  • Maximum Rds On @ 1.8A, 10V: 100 mOhm
  • Package: 8-SO
  • FET Feature: Logic Level Gate
  • Gate-Source Threshold Voltage @ 250μA: 1V
  • Maximum Gate Charge @ 10V: 25nC
  • Maximum Input Capacitance @ 25V: 440pF
  • Applications: Power Supplies, DC-DC Converters, and Motor Control

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4769 $50.0745
260+ $0.3914 $101.7640
400+ $0.3791 $151.6400
550+ $0.3669 $201.7950
705+ $0.3547 $250.0635
945+ $0.3180 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,936 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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