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Same model may have multiple batches, images only for reference.
IRF7311TR Real Image
Same model may have multiple batches, images only for reference.

IRF7311TR

Part No IRF7311TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Generation V Technology | MOSFET 2N-CH 20V 6.6A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 6.6A
Rds On (Maximum) at Id, Vgs 29mOhm at 6A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 700mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 27nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 900pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187203-IRF7311TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7311TR CAD Model

Description

The Infineon Technologies IRF7311TR is an N-Channel (Dual) transistor polarity-based electronic component with a tape and reel packaging.

  • Mounting Style: SMD
  • FET Feature: logic level gate
  • Part Status: obsolete
  • Operating Temperature Range: -55°C ~ 150°C
  • Manufacturer Homepage: www.irf.com
  • Manufacturer Package: 8-SOIC
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 4,000
  • MSL Level: 1 (Unlimited)
  • Maximum Power: 2W
  • Vds - Drain-Source Breakdown Voltage: 20V
  • Id - Continuous Drain Current: 6.6A
  • Rds On (Maximum) @ Id, Vgs: 29mOhm @ 6A, 4.5V
  • Gate Source Voltage(th) (Maximum) @ Id: 700mV @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 900pF @ 15V

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