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Same model may have multiple batches, images only for reference.
IRF7309PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7309PBF

Part No IRF7309PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET Power MOSFET | MOSFET N/P-CH 30V 4A/3A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N and P-Channel
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 4A, 3A
Rds On (Maximum) at Id, Vgs 50mOhm at 2.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 520pF at 15V
Maximum Power 1.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7309PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187194-IRF7309PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7309PBF CAD Model

Description

The Infineon Technologies N and P-Channel transistor is a high-performance device designed for use in Discrete Semiconductor Products.

  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 4A, 3A
  • Rds On (Maximum) @ Id, Vgs: 50mOhm @ 2.4A, 10V
  • Package: 8-SOIC
  • Maximum Power: 1.4W
  • Mounting Style: SMD
  • Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 520pF @ 15V
  • Gate Source Voltage(th) (Maximum) @ Id: 1V @ 250μA
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3302 $51.1810
325+ $0.3093 $100.5225
505+ $0.2989 $150.9445
720+ $0.2780 $200.1600
935+ $0.2675 $250.1125
1,170+ $0.2571 $300.8070
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