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IRF7319PBF

Part No IRF7319PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET® Power MOSFET | MOSFET N/P-CH 30V 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N and P-Channel
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 30V
Rds On (Maximum) at Id, Vgs 29mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 650pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7319PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187212-IRF7319PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7319PBF CAD Model

Description

The IRF7319PBF is an N and P-channel MOSFET manufactured by Infineon Technologies. This device is supplied in an 8-SO package and has a maximum power of 2W.

  • Drain-source breakdown voltage: 30V
  • Gate-source voltage (th): 1V @ 250μA
  • Gate charge (Qg) (maximum) @ Vgs: 33nC @ 10V
  • Input capacitance (Ciss) (maximum) @ Vds: 650pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4990 $52.3950
215+ $0.4674 $100.4910
335+ $0.4516 $151.2860
480+ $0.4200 $201.6000
620+ $0.4043 $250.6660
775+ $0.3885 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,900 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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