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IRF7325

Part No IRF7325
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 7.8A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 7.8A
Maximum Rds On at Id,Vgs 24 mOhm @ 7.8A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 2020pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046607-IRF7325
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7325 CAD Model

Description

The Infineon Technologies IRF7325 is a dual P-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Product Name: IRF7325
  • Manufacturer: Infineon Technologies
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 7.8A
  • Maximum Rds On @ Id,Vgs: 24 mOhm @ 7.8A, 4.5V
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Package: 8-SO
  • Mounting Type: SMD (SMT)
  • FET Type: Logic Level Gate
  • Maximum Input Capacitance: 2020pF @ 10V
  • Supply and Demand Status: Balanced

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