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Same model may have multiple batches, images only for reference.
IRF7338TRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7338TRPBF

Part No IRF7338TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 12V 6.3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6.3A, 3A
Maximum Rds On at Id,Vgs 34 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 8.6nC @ 4.5V
Max Input Capacitance 640pF @ 9V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 107228-IRF7338TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7338TRPBF CAD Model

Description

The IRF7338TRPBF is a N and P-Channel MOSFET transistor from Infineon Technologies.

  • Designed for Use In: Applications such as power supplies, motor control, and lighting
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current at 25°C: 6.3A for the N-channel and 3A for the P-channel
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 8.6nC @ 4.5V
  • Maximum Input Capacitance: 640pF @ 9V
  • Maximum Rds On at Id,Vgs: 34 mOhm @ 6A, 4.5V
  • Package: 8-SO package
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9603 $63.6824
18+ $6.5315 $117.5670
28+ $6.3271 $177.1588
38+ $6.1227 $232.6626
49+ $5.9194 $290.0506
66+ $5.3072 $350.2752
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Availability: 1,920 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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