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IRF7342D2PBF

Name: IRF7342D2PBF
Brand: Infineon Technologies
SKU: 461786
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF7342D2PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 55V 3.4A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	38nC @ 10V
Max Input Capacitance	690pF @ 25V
Maximum Gate-Source Voltage	±20V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	2W (Ta)
Maximum Rds On at Id,Vgs	105 mOhm @ 3.4A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	1046611-IRF7342D2PBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7342D2PBF CAD Model

Description

The IRF7342D2PBF is a P-Channel MOSFET from Infineon designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 55V
Continuous Drain Current: 3.4A @ 25°C
Maximum Rds On: 105 mOhm @ 3.4A and 10V
Gate-Source Threshold Voltage: 1V @ 250μA
Maximum Gate Charge: 38nC @ 10V
Maximum Input Capacitance: 690pF @ 25V
Package: 8-SO
Dimensions: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation: 2W (Ta)
Operating Temperature: -55°C to 150°C (TJ)

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