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Same model may have multiple batches, images only for reference.
IRF7342D2TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7342D2TRPBF

Part No IRF7342D2TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 3.4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 690pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 105 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046612-IRF7342D2TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7342D2TRPBF CAD Model

Description

The Infineon Technologies 1046612-IRF7342D2TRPBF is a P-Channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 3.4A (Ta).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 3.4A (Ta)
  • Maximum Rds On: 105 mOhm @ 3.4A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: 8-SO
  • Maximum Power Dissipation: 2W (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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