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Same model may have multiple batches, images only for reference.
IRF7413A
Same model may have multiple batches, images only for reference.

IRF7413A

Part No IRF7413A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8-SOIC
Datasheet
IRF7413A Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 79nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 6.6A, 10V
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069363-IRF7413A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7413A CAD Model

Description

The Infineon Technologies 069363-IRF7413A is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 12A @ 25°C.

  • Maximum Rds on @ Id,Vgs: 13.5 mOhm @ 6.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: 8-SO
  • Dimensions: 8-SOIC (0.154", 3.90mm Width)
  • Power Dissipation: 2.5W (Ta)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate Charge: 79nC @ 10V
  • Max Input Capacitance: 1800pF @ 25V
  • Supply and Demand Status: limited

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