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Same model may have multiple batches, images only for reference.
IRF7413ATR Real Image
Same model may have multiple batches, images only for reference.

IRF7413ATR

Part No IRF7413ATR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8-SOIC
Datasheet
IRF7413ATR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 79nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046636-IRF7413ATR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7413ATR CAD Model

Description

The Infineon Technologies IRF7413ATR is an N-Channel MOSFET transistor with a maximum drain-source breakdown voltage of 30V and a continuous drain current of 12A @ 25°C. Infineon Technologies

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A @ 25°C
  • Power Dissipation (Ta): 2.5W
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: 8-SO
  • Drive Voltage: 4.5V
  • Product Status: Obsolete
  • Supply and Demand: Balanced
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9736 $59.2080
75+ $1.6195 $121.4625
115+ $1.5687 $180.4005
155+ $1.5181 $235.3055
200+ $1.4675 $293.5000
265+ $1.3158 $348.6870
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