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Same model may have multiple batches, images only for reference.
IRF7468TRPBF
Same model may have multiple batches, images only for reference.

IRF7468TRPBF

Part No IRF7468TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 9.4A 8-SOIC
Datasheet
IRF7468TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 4.5V
Max Input Capacitance 2460pF @ 20V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 15.5 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001872-IRF7468TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7468TRPBF CAD Model

Description

The Infineon Technologies 001872-IRF7468TRPBF is an N-Channel MOSFET, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 9.4A @ 25°C
  • Maximum Rds on @ Id,Vgs: 15.5mOhm @ 9.4A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 34nC @ 4.5V
  • Maximum Input Capacitance: 2460pF @ 20V
  • Maximum Gate-Source Voltage: ±12V
  • Power Dissipation: 2.5W (Ta)
  • Package: 8-SOIC
  • Mounting: SMD (SMT) technology

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