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IRF7478PBF

Part No IRF7478PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 7A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 1740pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 26 mOhm @ 4.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046670-IRF7478PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7478PBF CAD Model

Description

The IRF7478PBF is an electronic component that is not for new designs manufactured by Infineon Technologies.

  • Channel Type: N-Channel MOSFET
  • Current Rating: 7A
  • Voltage Rating: 60V
  • Applications: Power supplies, motor drives, and welding equipment.
  • Power Dissipation: 2.5W
  • Package: 8-SO
  • Gate-Source Threshold Voltage: 3V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0036 $50.1800
125+ $0.8235 $102.9375
190+ $0.7978 $151.5820
260+ $0.7720 $200.7200
335+ $0.7463 $250.0105
450+ $0.6691 $301.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,650 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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