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Same model may have multiple batches, images only for reference.
IRF7492TR
Same model may have multiple batches, images only for reference.

IRF7492TR

Part No IRF7492TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.7A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 79 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001884-IRF7492TR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7492TR CAD Model

Description

The IRF7492TR is an N-channel MOSFET that is designed for use in a variety of applications, including power supplies, motor control, and lighting systems.

  • Maximum Drain-Source Voltage: 200V
  • Maximum Continuous Drain Current: 3.7A @ 25°C
  • Package: 8-SO
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Temperature Range: -55°C to 150°C
  • Maximum Gate Charge: 59nC @ 10V
  • Alternative Parts: IRF7493TR, IRF7494TR, and IRF7495TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4076 $63.3420
100+ $1.1550 $115.5000
155+ $1.1190 $173.4450
215+ $1.0829 $232.8235
280+ $1.0468 $293.1040
370+ $0.9385 $347.2450
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