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Same model may have multiple batches, images only for reference.
IRF7503TRPBF
Same model may have multiple batches, images only for reference.

IRF7503TRPBF

Part No IRF7503TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 2.4A MICRO8
Datasheet
IRF7503TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.4A
Maximum Rds On at Id,Vgs 135 mOhm @ 1.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 210pF @ 25V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 001892-IRF7503TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name IRF7503
Introduction Date February 22, 2005
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRF7503TRPBF CAD Model

Description

The Infineon Technologies IRF7503TRPBF is a 2 N-Channel (Dual) MOSFET with a logic level gate feature.

  • Category: Discrete Semiconductor Products
  • Application: Industrial and power management
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 2.4A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 12nC @ 10V
  • Max Input Capacitance: 210pF @ 25V
  • Maximum Rds On at Id,Vgs: 135 mOhm @ 1.7A, 10V
  • Supply and Demand Status: Balanced

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9+ $17.3508 $156.1572
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21+ $14.5523 $305.5983
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