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IRF7509TRPBF

Part No IRF7509TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 2.7A/2A MICRO8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A, 2A
Maximum Rds On at Id,Vgs 110 mOhm @ 1.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 210pF @ 25V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 001896-IRF7509TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7509TRPBF CAD Model

Description

The Infineon Technologies IRF7509TRPBF is a N and P-Channel FET featuring Logic Level Gate.

  • Product: Discrete Semiconductor Product
  • Applications: Power management and industrial applications
  • Case/Package: micro8
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 2.7A and 2A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 12nC @ 10V
  • Max Input Capacitance: 210pF @ 25V
  • Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 10V
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3985 $52.7820
28+ $3.6091 $101.0548
43+ $3.4963 $150.3409
60+ $3.3835 $203.0100
77+ $3.2707 $251.8439
103+ $2.9324 $302.0372
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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