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Same model may have multiple batches, images only for reference.
IRF7534D1TRPBF
Same model may have multiple batches, images only for reference.

IRF7534D1TRPBF

Part No IRF7534D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description -20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 4.3 A
Drain to Source Voltage (Vdss) -20 V
Fall Time 64 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 8
Packaging Tape and Reel
Power Dissipation 1.25 W
Radiation Hardening No
Rise Time 46 ns
RoHS Compliant
Turn-Off Delay Time 60 ns
Turn-On Delay Time 10 ns
Win Source Part Number 1065519-IRF7534D1TRPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF7534D1TRPBF CAD Model

Description

The IRF7534D1TRPBF is an RF transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Packaging: Tape and reel
  • Drain to Source Voltage: -20 V
  • Power Dissipation: 1.25 W
  • Number of Pins: 8
  • Rise Time: 46 ns
  • Fall Time: 64 ns
  • RoHS Compliance: Compliant
  • Radiation Hardening: No
  • Application: Transistors, FETs, MOSFETs, and other RF semiconductor products

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