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Same model may have multiple batches, images only for reference.
IRF7706 Real Image
Same model may have multiple batches, images only for reference.

IRF7706

Part No IRF7706
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7A 8-TSSOP
Datasheet
IRF7706 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2211pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.51W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046697-IRF7706
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7706 CAD Model

Description

The Infineon Technologies IRF7706 is a P-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 7A @ 25°C.

  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 72nC @ 10V
  • Package: 8-TSSOP
  • Operating Temperature: -55°C to 150°C
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7163 $60.0705
85+ $1.4083 $119.7055
130+ $1.3643 $177.3590
175+ $1.3203 $231.0525
230+ $1.2763 $293.5490
305+ $1.1443 $349.0115
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Availability: 3,080 pieces
MOQ: 35 pcs
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