The IRF7739L2TR1 is a DirectFET® power MOSFET from Infineon Technologies, designed for high-efficiency synchronous rectification in server, telecom, and desktop voltage regulators. Its innovative DirectFET® package provides superior thermal performance compared to traditional packages, enabling higher power density and improved system reliability.

Applications

• Synchronous rectification in DC-DC converters
• Voltage Regulator Modules (VRMs)
• Point-of-Load (POL) converters
• Power supplies for servers, telecom equipment, and desktops
• High-frequency switching applications

Features

• DirectFET® package for superior thermal performance
• Low on-state resistance (Rds(on))
• Optimized gate charge (Qg)
• 100% avalanche tested
• Low profile package
• Lead-free and RoHS compliant

Benefits

• Increased power density
• Improved thermal management
• Reduced power dissipation
• Enhanced system reliability
• Simplified design and assembly

Additional Details

The IRF7739L2TR1 features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 28A. The DirectFET® package minimizes thermal resistance, allowing for efficient heat transfer from the MOSFET junction to the ambient environment. Its low Rds(on) value reduces conduction losses, contributing to higher overall efficiency. The optimized gate charge ensures fast switching speeds and reduced switching losses. The device is avalanche rated, providing robustness against transient voltage spikes. The low-profile DirectFET® package is ideal for space-constrained applications and allows for efficient surface mount assembly. The PBF suffix indicates that the device is lead-free and compliant with RoHS environmental standards. The TR1 suffix indicates tape and reel packaging.

Key Specifications:

• Vds (Drain-Source Voltage): 30V
• Id (Continuous Drain Current): 28A
• Rds(on) (On-State Resistance): 3.8 mΩ (at Vgs = 10V)
• Qg (Total Gate Charge): 12 nC (at Vgs = 10V)
• Package: DirectFET® Small Can