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FQU10N20C

Part No FQU10N20C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 200V N-Channel MOSFET
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Rohs State Need to verify
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175518-FQU10N20C
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
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Description

The FQU10N20C is an N-Channel QFET® MOSFET from Fairchild/ON Semiconductor. This device is specifically designed to minimize input capacitance and gate charge. It's intended for use in high-speed switching applications. This MOSFET utilizes Fairchild's advanced QFET® technology, known for its excellent performance and reliability, making it efficient and robust.

Applications:

  • Power Supplies: Used in switched-mode power supplies (SMPS) for computers, servers, and other electronic devices.
  • DC-DC Converters: Employed in various DC-DC conversion circuits.
  • Motor Control: Utilized in motor control applications.
  • Lighting: Used in lighting applications, including LED drivers.
  • Uninterruptible Power Supplies (UPS): Suitable for UPS systems.

Features:

  • N-Channel MOSFET: Offers efficient current conduction and switching capabilities.
  • High Voltage Rating: Rated for 200V drain-source voltage (VDS).
  • Low On-Resistance: Features a low RDS(on) to minimize conduction losses.
  • Fast Switching Speed: Provides quick turn-on and turn-off times for efficient operation.
  • Low Gate Charge: Minimizes switching losses.

Benefits:

  • High Efficiency: Reduces power losses and improves overall system efficiency.
  • Reliable Performance: Offers stable and reliable performance in demanding applications.
  • Simplified Design: Reduces the need for complex circuitry, simplifying design efforts.
  • Reduced Heat Dissipation: Low on-resistance results in lower heat generation.
  • Improved Switching Performance: Low gate charge enhances switching characteristics.

Additional Details:

The FQU10N20C has a continuous drain current (ID) of 10A and a pulsed drain current (IDM) of 40A. It comes in a TO-251 (I-PAK) package. The gate-source voltage (VGS) is rated at ±30V. This MOSFET is well-suited for applications requiring efficient power switching and high reliability. The reduced gate charge contributes to lower switching losses, making it a good choice for high-frequency applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4066 $59.4726
27+ $4.4364 $119.7828
41+ $4.2978 $176.2098
56+ $4.1592 $232.9152
72+ $4.0206 $289.4832
97+ $3.6048 $349.6656
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Availability: 2,080 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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