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Same model may have multiple batches, images only for reference.
IRF7757TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7757TRPBF

Part No IRF7757TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.8A 8TSSOP
Datasheet
IRF7757TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.8A
Maximum Rds On at Id,Vgs 35 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 1340pF @ 15V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1046717-IRF7757TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7757TRPBF CAD Model

Description

The Infineon Technologies IRF7757TRPBF is a dual N-channel MOSFET that features a logic level gate and is packaged in an 8-TSSOP. This MOSFET is designed for use in discrete semiconductor products and has a maximum power dissipation of 1.2W.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.8A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 23nC @ 4.5V
  • Maximum Input Capacitance: 1340pF @ 15V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 4.8A, 4.5V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9560 $62.1400
150+ $0.7845 $117.6750
230+ $0.7600 $174.8000
315+ $0.7354 $231.6510
410+ $0.7109 $291.4690
545+ $0.6373 $347.3285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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