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IRF7811ATRPBF

Part No IRF7811ATRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 28V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 1760pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001949-IRF7811ATRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF7811
Introduction Date January 19, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7811ATRPBF CAD Model

Description

The Infineon Technologies IRF7811ATRPBF is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 28V
  • Continuous Drain Current: 11A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 1760pF @ 15V
  • Maximum Rds On @ Id,Vgs: 10 mOhm @ 11A, 10V
  • Packaging: Reel
  • Commonly Used In: Electronics Industry

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2807 $58.9470
500+ $0.2310 $115.5000
780+ $0.2229 $173.8620
1,070+ $0.2160 $231.1200
1,385+ $0.2091 $289.6035
1,855+ $0.1871 $347.0705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,300 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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