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Same model may have multiple batches, images only for reference.
IRF7N1405SCV
Same model may have multiple batches, images only for reference.

IRF7N1405SCV

Part No IRF7N1405SCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 55 A
Drain to Source Breakdown Voltage 55 V
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Bulk
Power Dissipation 100 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1207787-IRF7N1405SCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7N1405SCV CAD Model

Description

The Infineon Technologies IRF7N1405SCV is a limited supply electronic component that is highly sought after in the open market.

  • Type: N-channel MOSFET
  • Maximum Power Dissipation: 100W
  • Maximum Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current: 55A
  • Mounting Type: Surface Mount

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