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IRF8306MTRPBF

Part No IRF8306MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 23A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 23A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 38nC @ 4.5V
Max Input Capacitance 4110pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.1W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 23A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 205320-IRF8306MTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8306MTRPBF CAD Model

Description

The Infineon Technologies IRF8306MTRPBF is a MOSFET with a Schottky Diode (Body) FET feature.

  • Polarity: N-Channel
  • Power Dissipation: 2.1W (Ta), 75W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 23A (Ta), 140A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 38nC @ 4.5V
  • Package: DIRECTFET MX
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6759 $58.6565
85+ $1.3756 $116.9260
130+ $1.3329 $173.2770
180+ $1.2901 $232.2180
235+ $1.2462 $292.8570
310+ $1.1180 $346.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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