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IRF9317TRPBF

Part No IRF9317TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 16A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 50μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 2820pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017556-IRF9317TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9317TRPBF CAD Model

Description

The Infineon Technologies P-Channel MOSFET is a high-performance component designed to operate in a temperature range of -55°C to 150°C (TJ).

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A (Ta)
  • Gate-Source Threshold Voltage: 2.4V @ 50μA
  • Maximum Gate Charge: 92nC @ 10V
  • Maximum Input Capacitance: 2820pF @ 15V
  • Maximum Rds On: 6.6 mOhm @ 16A, 10V
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6622 $52.9760
185+ $0.5434 $100.5290
285+ $0.5264 $150.0240
395+ $0.5094 $201.2130
510+ $0.4924 $251.1240
680+ $0.4415 $300.2200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,600 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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