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Same model may have multiple batches, images only for reference.
IRFB4620PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB4620PBF

Part No IRFB4620PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 25A TO-220AB
Datasheet
IRFB4620PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 72.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046820-IRFB4620PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB4620PBF CAD Model

Description

The Infineon Technologies IRFB4620PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 25A @ 25°C.

  • Maximum Power Dissipation: 144W @ Tc
  • Maximum Rds On: 72.5 mOhm @ 15A and 10V
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 1710pF @ 50V
  • Mounting Type: Through-hole
  • Package: TO-220AB
  • Application: Discrete semiconductor products

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135+ $0.7460 $100.7100
210+ $0.7203 $151.2630
300+ $0.6688 $200.6400
390+ $0.6431 $250.8090
490+ $0.6174 $302.5260
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