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Same model may have multiple batches, images only for reference.
IRFHM8330TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFHM8330TRPBF

Part No IRFHM8330TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8PQFN
Datasheet
IRFHM8330TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1450pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.7W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (3.3x3.3), Power33
Dimension 8-PowerTDFN
Win Source Part Number 017605-IRFHM8330TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHM8330TRPBF CAD Model

Description

The Infineon Technologies IRFHM8330TRPBF is an SMD (SMT) mounted MOSFET technology transistor.

  • Mounting: SMD (SMT)
  • Type: N-channel
  • Power Dissipation: 2.7W (Ta), 33W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-PQFN (3.3x3.3), Power33
  • Dimension: 8-PowerTDFN
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 16A (Ta)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Max Gate Charge: 20nC @ 10V
  • Max Input Capacitance: 1450pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 6.6 mOhm @ 20A, 10V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand Status: Balanced

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295+ $0.3924 $115.7580
460+ $0.3801 $174.8460
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1,090+ $0.3188 $347.4920
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