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Same model may have multiple batches, images only for reference.
IRFM460 Real Image
Same model may have multiple batches, images only for reference.

IRFM460

Part No IRFM460
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 19A TO-254AA
Datasheet
IRFM460 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 190nC @ 10V
Max Input Capacitance 4300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 12A, 10V
Mounting Through Hole
Case / Package TO-254AA
Dimension TO-254-3, TO-254AA (Straight Leads)
Win Source Part Number 205371-IRFM460
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFM460 CAD Model

Description

The Infineon Technologies IRFP90N20DPBF is a N-channel MOSFET transistor that is designed for use in power management and industrial applications.

  • Maximum Power Dissipation: 580W @ Tc
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 94A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 270nC @ 10V
  • Maximum Input Capacitance: 6040pF @ 25V
  • Maximum Rds On: 23 mOhm @ 56A and 10V
  • Package: TO-247AC case
  • Mounting: through hole
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $185.6251 $185.6251
2+ $179.4375 $358.8750
3+ $160.8750 $482.6250
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