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Same model may have multiple batches, images only for reference.
IRFR120Z Real Image
Same model may have multiple batches, images only for reference.

IRFR120Z

Part No IRFR120Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 100V 8.7A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 8.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 190mOhm at 5.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 310pF at 25V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1187866-IRFR120Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, LED Lighting
Ultra Librarian 3D Model Ultra Librarian IRFR120Z CAD Model

Description

The Infineon Technologies 1187866-IRFR120Z is an N-channel MOSFET transistor that is commonly used in power management and LED lighting applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.7A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 190mOhm @ 5.2A and 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 35W

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