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Same model may have multiple batches, images only for reference.
IRFR12N25DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR12N25DPBF

Part No IRFR12N25DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 14A DPAK
Datasheet
IRFR12N25DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 60666-IRFR12N25DPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFR12N25DPBF CAD Model

Description

The Infineon Technologies 60666-IRFR12N25DPBF is an N-Channel MOSFET with a maximum power dissipation of 144W (Tc).

  • Maximum Power Dissipation: 144W (Tc)
  • Supply and Demand Status: limited
  • Package/Case: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 14A (Tc)
  • Maximum Rds On @ Id,Vgs: 260 mOhm @ 8.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9101 $59.1565
155+ $0.7473 $115.8315
240+ $0.7242 $173.8080
330+ $0.7011 $231.3630
430+ $0.6768 $291.0240
575+ $0.6075 $349.3125
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Availability: 2,710 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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