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Same model may have multiple batches, images only for reference.
IRFR13N20DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR13N20DPBF

Part No IRFR13N20DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 13A DPAK
Datasheet
IRFR13N20DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 235 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 108601-IRFR13N20DPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR13N20DPBF CAD Model

Description

The Infineon Technologies IRFR13N20DPBF is an N-channel MOSFET transistor designed for use in power management applications.

  • Maximum Power Dissipation: 110W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 830pF @ 25V
  • Maximum Rds On @ Id,Vgs: 235 mOhm @ 8A, 10V
  • Mounting Type: Surface Mount
  • Package: D-Pak
  • Operating Temperature: -55°C to 175°C (TJ)

The IRFR13N20DPBF is not for new designs and has a medium popularity in the market., and the supply and demand status is limited.

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