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IRFR3303PBF

Part No IRFR3303PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 33A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047038-IRFR3303PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3303PBF CAD Model

Description

The IRFR3303PBF is a N-channel MOSFET manufactured by Infineon Technologies.

  • Package: D-Pak
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 33A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 29nC @ 10V
  • Maximum Rds On @ Id,Vgs: 31 mOhm @ 18A, 10V
  • Power Dissipation (Max): 57W (Tc)
  • Suitable for: Discrete Semiconductor Products
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Operational Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.2391 $50.8692
29+ $3.4783 $100.8707
45+ $3.3696 $151.6320
62+ $3.2609 $202.1758
80+ $3.1522 $252.1760
107+ $2.8261 $302.3927
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,260 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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