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Same model may have multiple batches, images only for reference.
RSH100N03TB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSH100N03TB1

Part No RSH100N03TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A SOP8
Datasheet
RSH100N03TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1070pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 13.3 mOhm @ 10A, 10V
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092787-RSH100N03TB1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RSH100N03TB1 CAD Model

Description

The RSH100N03TB1 is an N-channel MOSFET that is manufactured by Rohm Semiconductor.

  • Application: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6995 $59.4575
205+ $0.5740 $117.6700
315+ $0.5560 $175.1400
430+ $0.5382 $231.4260
560+ $0.5202 $291.3120
745+ $0.4664 $347.4680
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Availability: 16,600 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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