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Same model may have multiple batches, images only for reference.
IRFR3504ZTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3504ZTRLPBF

Part No IRFR3504ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A DPAK  /  N-Channel 40 V 42A (Tc) 90W (Tc) Surface Mount D-Pak
Datasheet
IRFR3504ZTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1510 pF @ 25 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001552130
Standard Package 3,000
Win Source Part Number 1065578-IRFR3504ZTRLPBF
Ultra Librarian 3D Model Ultra Librarian IRFR3504ZTRLPBF CAD Model

Description

The IRFR3504ZTRLPBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET™
  • Type: Discrete Semiconductor Products
  • Package: Surface mount
  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id) @ 25°C: 42A (Tc)
  • On-Resistance (Rds On) @ Id, Vgs: 9mOhm @ 42A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Ideal For: Use in transistors, FETs, MOSFETs, and other electronic components

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