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Same model may have multiple batches, images only for reference.
IRFR3607PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3607PBF

Part No IRFR3607PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A DPAK
Datasheet
IRFR3607PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 083944-IRFR3607PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3607PBF CAD Model

Description

Infineon Technologies IRFR3607PBF is an N-Channel MOSFET that operates on a maximum power dissipation of 140W (Tc).

  • Drain-source breakdown voltage: 75V
  • Continuous drain current: 56A (Tc)
  • Gate-source threshold voltage: 4V @ 100μA
  • Maximum gate charge: 84nC @ 10V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Status: not for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3525 $51.1125
350+ $0.2893 $101.2550
540+ $0.2802 $151.3080
740+ $0.2712 $200.6880
955+ $0.2622 $250.4010
1,280+ $0.2350 $300.8000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,000 pieces
MOQ: 145 pcs
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