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IRFR3706TRPBF

Part No IRFR3706TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 75A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 119105-IRFR3706TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian IRFR3706TRPBF CAD Model

Description

The Infineon Technologies IRFR3706TRPBF is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Transistor Polarity: N-channel polarity
  • Power dissipation: 88W (Tc)
  • Drain-source breakdown voltage: 20V
  • Maximum Rds on @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Package: D-Pak case
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum gate-source voltage: ±12V
  • Gate-source threshold voltage: 2V @ 250μA
  • Maximum gate charge: 35nC @ 4.5V
  • Maximum input capacitance: 2410pF @ 10V
  • Operating temperature range: -55°C to 175°C (TJ)
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2727 $50.4495
450+ $0.2238 $100.7100
695+ $0.2168 $150.6760
955+ $0.2098 $200.3590
1,235+ $0.2028 $250.4580
1,655+ $0.1818 $300.8790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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