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Same model may have multiple batches, images only for reference.
IRFR3708PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3708PBF

Part No IRFR3708PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 61A DPAK
Datasheet
IRFR3708PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2417pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047054-IRFR3708PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3708PBF CAD Model

Description

The Infineon Technologies IRFR3708PBF is a MOSFET transistor with an N-channel polarity.

  • Polarity: N-Channel
  • Case/Package: D-Pak, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 87W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Drive Voltage (max Rds On, min Rds On): 2.8V, 10V
  • Continuous Drain Current: 61A (Tc) @ 25°C
  • Maximum Rds On: 12.5 mOhm @ 15A, 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3636 $52.3632
28+ $3.5804 $100.2512
44+ $3.4686 $152.6184
60+ $3.3567 $201.4020
78+ $3.2448 $253.0944
104+ $2.9091 $302.5464
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MOQ: 12 pcs
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